1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[A-6-2]An 8 nm-thick Polysilicon MOS Transistor and Its Thin Film Effects

T. Hashimoto、T. Kobayashi、T. Mine、T. Yamanaka、N. Hashimoto、A. Shimizu、T. Nishida、Y. Kawamoto(1.Central Research Laboratory, Hitachi Ltd.、2.Hitachi VLSI Engineering Corp.)
https://doi.org/10.7567/SSDM.1989.A-6-2
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