1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[A-6-4]Multilayered Well Formation for Sub-0.5 μm CMOS Devices Utilizing High Energy Ion Implantation

Kiyonori OHYU、Hidekazu GOTHO、Tadashi SUZUKI、Nobuyoshi NATSUAKI(1.Central Research Laboratory, Hitachi, Ltd.)
https://doi.org/10.7567/SSDM.1989.A-6-4
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