1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
戻る
International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[A-7-5]High Drivability CMOSFETs with Asymmetrical Source-Drain (ASD) Structure for Low Supply Voltage ULSIs

A. Shimizu、T. Yamanaka、N. Hashimoto、T. Hashimoto、Y. Sakai、E. Takeda(1.Hitachi VLSI Engineering Corp.、2.Central Reseach Laboratory Hitachi Ltd.、3.Semiconductor Design & Development Center, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1989.A-7-5
PDFダウンロードPDFダウンロード
戻る