1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[A-8-1]A New Insight into the PN-Junction Characteristics of ULSI -The Time Dependent Junction Breakdown (TDJB)-

Hideyuki MATSUOKA、Digh HISAMOTO、Ryuichi IZAWA、Eiji TAKEDA(1.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1989.A-8-1
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