1989 Conference on Solid State Devices and Materials
1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
1989 Conference on Solid State Devices and Materials
1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
[B-1-1]Perfect-Selectivity Directional Etching of Silicon Using Ultraclean ECR Plasma
Takashi MATSUURA、Hiroaki UETAKE、Junichi MUROTA、Kouichi FUKUDA、Tadahiro OHMI、Nobuo MIKOSHIBA、Tadashi KAWASHIMA、Yoshihiro YAMASHITA(1.Department of Electronics, Faculty of Engineering, Tohoku University、2.Research Institute of Electrical Communication, Tohoku University、3.Takatsuka Units, Seiko Instruments Inc.)
