1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[B-2-2]A Composite lon-Implantation/Dopant Diffusion Simulation Involving Point Defect Kinetics and Its Application to Ultra Shallow Base Design

Takako K. OKADA、Koichi KATO(1.ULSI Research Center, Toshiba Corporation、2.Research and Development Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1989.B-2-2
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