1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[B-2-4]Optimization of the Amorphous Layer Thickness and the Junction Depth on the Preamorphization Method for Shallow-Junction Formation

A. Tanaka、T. Yamaji、A. Uchiyama、T. Hayashi、T. Iwabuchi、S. Nishikawa(1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)
https://doi.org/10.7567/SSDM.1989.B-2-4
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