1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[B-2-5]Reduction of Thickness Secondary Defects in MeV Ion Implanted Silicon by Intrinsic Gettering

N. Shimizu、B. Mizuno、S. Akiyama、K. Tsuji、T. Ohzone(1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)
https://doi.org/10.7567/SSDM.1989.B-2-5
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