1991 International Conference on Solid State Devices and Materials

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜8月29日Pacifico Yokohama, Yokohama, Japan
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International Conference on Solid State Devices and Materials
1991 International Conference on Solid State Devices and Materials

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜8月29日Pacifico Yokohama, Yokohama, Japan

[A-2-1]Limits on Gate Insulator Thickness for MISFET Operation in Pure-Oxide and Nitrided-Oxide Gate Cases

T. Morimoto、H. S. Momose、M. Tsuchiaki、Y. Ozawa、K. Yamabe、H. Iwai(1.ULSI Research Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1991.A-2-1
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