[A-2-5]Strain Evaluation at the Si/SiO2 Interface Using ER Method
Pornchai YONGWATTANASOONTORN、Hitoshi KUBO、Masato MORIFUJI、Kenji TANIGUCHI、Chihiro HAMAGUCHI Keitaro IMAI(1.Department of Electronic Engineering, Osaka University、2.ULSI Research center, Toshiba Corporation)
