1991 International Conference on Solid State Devices and Materials

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜8月29日Pacifico Yokohama, Yokohama, Japan
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International Conference on Solid State Devices and Materials
1991 International Conference on Solid State Devices and Materials

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜8月29日Pacifico Yokohama, Yokohama, Japan

[B-1-4]Rapid Vapor-Phase Direct Doping; Ultra-Shallow Junction Formation Method for High-Speed Bipolar and Highly-Integrated DRAM LSIs

Yukihiro Kiyota、Takahiro Onai、Tohru Nakamura、Taroh Inada、Atsushi Kuranouchi、Yasuaki Hirano(1.Central Research Laboratory, Hitachi, Ltd、2.College of Engineering, Hosei University)
https://doi.org/10.7567/SSDM.1991.B-1-4
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