1991 International Conference on Solid State Devices and Materials

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜8月29日Pacifico Yokohama, Yokohama, Japan
戻る
International Conference on Solid State Devices and Materials
1991 International Conference on Solid State Devices and Materials

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜8月29日Pacifico Yokohama, Yokohama, Japan

[B-1-5]An Analysis of p+-n Junction Capacitance with Three-Dimensional Impurity Profiling Method Using Scanning Tunneling Microscopy

M. Tanimoto、T. Douseki、T. Takigami(1.NTT LSI Laboratories)
https://doi.org/10.7567/SSDM.1991.B-1-5
PDFダウンロードPDFダウンロード
戻る