1991 International Conference on Solid State Devices and Materials

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜8月29日Pacifico Yokohama, Yokohama, Japan
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International Conference on Solid State Devices and Materials
1991 International Conference on Solid State Devices and Materials

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜8月29日Pacifico Yokohama, Yokohama, Japan

[C-1-3]InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si Substrates

Toshiki Makimoto、Kenji Kurishima、Takashi Kobayashi、Tadao Ishibashi(1.NTT Basic Research Laboratories、2.NTT LSI Laboratories)
https://doi.org/10.7567/SSDM.1991.C-1-3
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