1991 International Conference on Solid State Devices and Materials

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜8月29日Pacifico Yokohama, Yokohama, Japan
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International Conference on Solid State Devices and Materials
1991 International Conference on Solid State Devices and Materials

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜8月29日Pacifico Yokohama, Yokohama, Japan

[D-2-2]High Power Operation of InGaAlP Visible Light Laser Diodes with an In0.62Ga0.38P Active Layer

K. Nitta、K. Itaya、Y. Nishikawa、M. Ishikawa、M. Okajima、G. Hatakoshi(1.Research and Development Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1991.D-2-2
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