1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan
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International Conference on Solid State Devices and Materials
1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan

[A-1-3]Silicon Epitaxial Growth by a Fast Wafer Rotating Reactor Using Silane Gas

Yuusuke SATO、Tamami TAMURA、Toshimitsu OHMINE(1.Toshiba R&D Center, Toshiba Corporation、2.Toshiba Corporation Fuchu Works)
https://doi.org/10.7567/SSDM.1992.A-1-3
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