1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan
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International Conference on Solid State Devices and Materials
1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan

[A-1-5]Control of Interstitial Density in the Preamorphized Si by Carbon Implantation

Satoshi Nishikawa、Tetsuo Yamaji(1.Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.)
https://doi.org/10.7567/SSDM.1992.A-1-5
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