1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan
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International Conference on Solid State Devices and Materials
1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan

[B-1-2]High-Performance Poly-Si Thin-Film Transistors with Excimer-Laser Annealed Silicon-Nitride Gate

Kazuhiro Shimizu、Masayuki Higashimoto、Kyoutarou Nakamura、Osamu Sugiura、Masakiyo Matsumura(1.Department of Physical Electronics, Tokyo Institute of Technology、2.Fujitsu Corp.)
https://doi.org/10.7567/SSDM.1992.B-1-2
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