1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan
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International Conference on Solid State Devices and Materials
1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan

[B-1-3]A Simple Polysilicon Thin Film Transistor Structure for Achieving High On/Off Current Ratio Independent of Gate Bias

J. Kanicki、M. K. Hatalis(1.IBM Research Division, Thomas J. Watson Research Center、2.Department of Electrical Engineering and Computer Science Lehigh University)
https://doi.org/10.7567/SSDM.1992.B-1-3
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