1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan
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International Conference on Solid State Devices and Materials
1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan

[B-2-2]New Drain Conductance Method to Evaluate Impact Ionization Phenomenon in SOI MOSFET

Hiroyuki KURINO、Takeshi HASHIMOTO、Kiyomi HATA、Hiroyuki KIBA、Yasuo YAMAGUCHI、Tadashi NISHIMURA、Mitumasa KOYANAGI(1.Research Center for Integrated Systems, Hiroshima University、2.LSI Laboratory, Mitsubishi Electric Corporation)
https://doi.org/10.7567/SSDM.1992.B-2-2
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