1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan
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International Conference on Solid State Devices and Materials
1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan

[B-2-3]Energy Transport Simulation with Quasi Three-Dimensional Temperature Analysis for SOI-MOSFET

Hiroyuki KIBA、Hiroyuki KURINO、Takeshi HASHIMOTO、Hiroki MORI、Ken YAMAGUCHI、Mitumasa KOYANAGI(1.Research Center for Integrated Systems, Hiroshima University、2.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1992.B-2-3
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