1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan
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International Conference on Solid State Devices and Materials
1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan

[D-1-3]Submicron SiO2 Hole Filling Characteristics Employing ECR Al Sputtering with High Magnetic Field

N. Morimoto、S. Takehiro、Y. Matsui、I. Utsunomiya、H. Shindo、S. Shingubara、Y. Horiike(1.Dept. of Electrical Engineering, Hiroshima University、2.Faculty of engineering, Fukuyama University)
https://doi.org/10.7567/SSDM.1992.D-1-3
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