1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan
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International Conference on Solid State Devices and Materials
1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan

[D-1-5]Low Resistance and Thermally Stable Ti-Silicided Shallow Junction Formed by Advanced 2-Step Rapid Thermal Processing and Its Application to Deep Submicron Contact

H. Kotaki、K. Mitsuhashi、J. Takagi、Y. Akagi、M. Koba(1.Central Research Laboratories, Research and Analysis Center, Sharp Corporation)
https://doi.org/10.7567/SSDM.1992.D-1-5
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