1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan
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International Conference on Solid State Devices and Materials
1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan

[PA1-1]The Initial Stages of the Thermal Oxidation of Si(001) 2×1 Surface Studied by Scanning Tunneling Microscopy

Masaharu UDAGAWA、Masaaki NIWA、Isao SUMITA(1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.、2.Matsushita Research Institute Tokyo, Inc.)
https://doi.org/10.7567/SSDM.1992.PA1-1
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