1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan
International Conference on Solid State Devices and Materials
1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan

[PA1-3]In-situ Characterization of Si Surface Oxidation by High-Sensitivity Infrared Reflection Spectroscopic Method in Vacuum Chamber

M. NISHIDA、Y. MATSUI、M. OKUYAMA、Y. HAMAKAWA(1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)
https://doi.org/10.7567/SSDM.1992.PA1-3