1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan
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International Conference on Solid State Devices and Materials
1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜8月28日Tsukuba Center Building, Tsukuba, Japan

[PA2-2]A High Speed, Low Power P-Channel Flash EEPROM Using Silicon Rich Oxide as Tunneling Dielectric

C. C. -H. Hsu、A. Acovic、L. Dori、B. Wu、T. Lii、D. Quinlan、D. DiMaria、Y. Taur、M. Wordeman、T. Ning(1.IBM Research Division, Thomas J. Watson Research Center、2.Department of Electrical Engineering, National Tsing-Hua Univ.)
https://doi.org/10.7567/SSDM.1992.PA2-2
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