1994 International Conference on Solid State Devices and Materials
1994年8月23日〜8月26日Pacifico Yokohama, Yokohama, Japan
1994 International Conference on Solid State Devices and Materials
1994年8月23日〜8月26日Pacifico Yokohama, Yokohama, Japan
[S-I-2-4]Improvements in the Electrical Activity of Nitrogen Doped P-Type ZnSe Due to InGaP Buffer Layer
S. Saito、Y. Nishikawa、J. Rennie、M. Onomura、P. J. Parbrook、K. Nitta、M. Ishikawa、G. Hatakoshi(1.Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation)
