1995 International Conference on Solid State Devices and Materials

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜8月24日International House, Osaka, Japan
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International Conference on Solid State Devices and Materials
1995 International Conference on Solid State Devices and Materials

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜8月24日International House, Osaka, Japan

[B-1-3]CVD-EPI MOS Transistors with a 65 nm Vertical Channel

F. Hofmann、W. H. Krautschneider、L. Risch、H. Schaefer(1.Siemens AG, Corporate Research and Development, ZFE T MEI)
https://doi.org/10.7567/SSDM.1995.B-1-3
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