1995 International Conference on Solid State Devices and Materials

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜8月24日International House, Osaka, Japan
戻る
International Conference on Solid State Devices and Materials
1995 International Conference on Solid State Devices and Materials

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜8月24日International House, Osaka, Japan

[B-1-6]In-Situ Doped CMOS Polysilicon Thin Film Transistors

Byung-Hyuk Min、Cheol-Min Park、Byung-Seong Bae、Min-Koo Han(1.Dept. of Electrical Engineering, Seoul National University、2.Special Marketing Team/Poly PJT, Samsung Electronics Co.)
https://doi.org/10.7567/SSDM.1995.B-1-6
PDFダウンロードPDFダウンロード
戻る