1995 International Conference on Solid State Devices and Materials

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜8月24日International House, Osaka, Japan
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International Conference on Solid State Devices and Materials
1995 International Conference on Solid State Devices and Materials

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜8月24日International House, Osaka, Japan

[B-2-1]A Novel High Density EEPROM Cells Using Poly-Gate Hole (POLE) Structure Suitable for Low Power Applications

Masataka Takebuchi、Jun-ichiro Noda、Daisuke Tohyama、Shu Ueno、Kanji Osari、Kuniyoshi Yoshikawa(1.Toshiba Corp.、2.Toshiba Microelectronics Corp.)
https://doi.org/10.7567/SSDM.1995.B-2-1
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