1995 International Conference on Solid State Devices and Materials

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜8月24日International House, Osaka, Japan
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International Conference on Solid State Devices and Materials
1995 International Conference on Solid State Devices and Materials

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜8月24日International House, Osaka, Japan

[B-2-4]High-Reliability Programming Method Suitable for Flash Memories of More Than 256 Mb

Naoki Miyamoto、Takayuki Kawahara、Syun-ichi Saeki、Yusuke Jyouno、Masataka Kato、Katsutaka Kimura(1.Hitachi Device Engineering, Co., Ltd.、2.Central Research Laboratory, Hitachi Ltd.、3.Semiconductor & Integrated Circuits Division, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1995.B-2-4
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