1995 International Conference on Solid State Devices and Materials

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜8月24日International House, Osaka, Japan
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International Conference on Solid State Devices and Materials
1995 International Conference on Solid State Devices and Materials

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜8月24日International House, Osaka, Japan

[D-1-3]Deep Levels and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy

S. Shiobara、T. Hashizume、H. Hasegawa(1.Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido University)
https://doi.org/10.7567/SSDM.1995.D-1-3
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