1995 International Conference on Solid State Devices and Materials

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜8月24日International House, Osaka, Japan
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International Conference on Solid State Devices and Materials
1995 International Conference on Solid State Devices and Materials

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜8月24日International House, Osaka, Japan

[S-I-2-1]Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method

Takeshi KANASHIMA、Masanori OKUYAMA、Yoshihiro HAMAKAWA(1.Department of Electrical Engineering, Faculty of Engineering Science Osaka University)
https://doi.org/10.7567/SSDM.1995.S-I-2-1
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