1995 International Conference on Solid State Devices and Materials
1995年8月21日〜8月24日International House, Osaka, Japan
1995 International Conference on Solid State Devices and Materials
1995年8月21日〜8月24日International House, Osaka, Japan
[S-I-2-4]Low-Thermal-Budget Process-Controlled Monolayer Level Incorporation of Nitrogen into Ultra-Thin Gate Dielectric Structures: Applications to MOS Devices
Gerald LUCOVSKY、David R. LEE、Sunil V. HATTANGADY、Hiro NIIMI、Chris PARKER、John R. HAUSER(1.North Carolina State University, Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering)
