1995 International Conference on Solid State Devices and Materials
1995年8月21日〜8月24日International House, Osaka, Japan
1995 International Conference on Solid State Devices and Materials
1995年8月21日〜8月24日International House, Osaka, Japan
[S-IV-3]Surface Reaction Controlled W-CVD Technology for 0.1-μm Low-Resistive, Encroachment-Free CMOS-FET Applications
Yoshitaka Nakamura、Nobuyoshi Kobayashi、Digh Hisamoto、Kazunori Umeda、Ryo Nagai(1.Semiconductor Development Center, Semiconductor & Integrated Circuits Div., Hitachi, Ltd.、2.Central Research Laboratory, Hitachi, Ltd.)
