1995 International Conference on Solid State Devices and Materials
1995年8月21日〜8月24日International House, Osaka, Japan
1995 International Conference on Solid State Devices and Materials
1995年8月21日〜8月24日International House, Osaka, Japan
[S-IV-6]Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)
H. Kotaki、M. Nakano、S. Hayashida、T. Matsuoka、S. Kakimoto、A. Nakano、K. Uda、Y. Sato(1.Central Research Laboratories, Sharp Corporation、2.Analysis Center, (IC) Group, Sharp Corporation)
