1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜8月29日Pacifico Yokohama, Yokohama, Japan
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International Conference on Solid State Devices and Materials
1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜8月29日Pacifico Yokohama, Yokohama, Japan

[A-1-3]A Novel Conductance Measurement Technique for Profiling the Lateral LDD n-Doping Concentrations of Submicron MOS Devices

Steve S. Chung、G. H. Lee、S. M. Cheng、M. S. Liang(1.Department of Electronic Engineering, National Chiao Tung University、2.Taiwan Semiconductor Manufacturing Co.)
https://doi.org/10.7567/SSDM.1996.A-1-3
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