1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜8月29日Pacifico Yokohama, Yokohama, Japan
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International Conference on Solid State Devices and Materials
1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜8月29日Pacifico Yokohama, Yokohama, Japan

[A-1-4]A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current Measurement

S. M. Cheng、Steve S. Chung、M. S. Liang(1.Department of Electronic Engineering, National Chiao Tung University、2.Taiwan Semiconductor Manufacturing Co.)
https://doi.org/10.7567/SSDM.1996.A-1-4
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