1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜8月29日Pacifico Yokohama, Yokohama, Japan
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International Conference on Solid State Devices and Materials
1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜8月29日Pacifico Yokohama, Yokohama, Japan

[A-2-2]Proposal of Pseudo Source and Drain MOSFETs and Evaluation for 10-nm Gate MOSFETs

H. Kawaura、T. Sakamoto、T. Baba、Y. Ochiai、J. Fujita、S. Matsui、J. Sone(1.Fundamental Research Laboratories, NEC Corporation)
https://doi.org/10.7567/SSDM.1996.A-2-2
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