1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜8月29日Pacifico Yokohama, Yokohama, Japan
戻る
International Conference on Solid State Devices and Materials
1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜8月29日Pacifico Yokohama, Yokohama, Japan

[A-4-4]Influence of Ion Energy on Carrier Activation and Source/Drain Parasitic Resistance in Low-Energy Ion Implantation for 0.15-μm MOSFETs

Akio NISHIDA、Eiichi MURAKAMI、Shin'ichiro KIMURA(1.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1996.A-4-4
PDFダウンロードPDFダウンロード
戻る