1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜8月29日Pacifico Yokohama, Yokohama, Japan
戻る
International Conference on Solid State Devices and Materials
1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜8月29日Pacifico Yokohama, Yokohama, Japan

[D-1-3]New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTs

Tohru OKA、Kiyoshi OUCHI、Kazuhiro MOCHIZUKI、Tohru NAKAMURA(1.Central Research Laboratory, Hitachi, Ltd.)
https://doi.org/10.7567/SSDM.1996.D-1-3
PDFダウンロードPDFダウンロード
戻る