1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜8月29日Pacifico Yokohama, Yokohama, Japan
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International Conference on Solid State Devices and Materials
1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜8月29日Pacifico Yokohama, Yokohama, Japan

[D-2-3]The Change of Mo/GaAs Schottky Characteristics by the Forward Gate Current

Tomoyuki OHSHIMA、Ryoji SHIGEMASA、Tamotsu KIMURA(1.Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.)
https://doi.org/10.7567/SSDM.1996.D-2-3
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