1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜8月29日Pacifico Yokohama, Yokohama, Japan
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International Conference on Solid State Devices and Materials
1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜8月29日Pacifico Yokohama, Yokohama, Japan

[Sympo.V-8]MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate

Akihiko ISHIBASHI、Hidemi TAKEISHI、Nobuyuki UEMURA、Masahiro KUME、Yuzaburoh BAN(1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)
https://doi.org/10.7567/SSDM.1996.Sympo.V-8
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