1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
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International Conference on Solid State Devices and Materials
1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan

[A-1-4]Hopping-Conduction Energy of Holes in SiO2 Determined Accurately by Molecular Orbital Calculation

Yoshiaki Takemura、Jiro Ushio、Takuya Maruizumi、Masanobu Miyao(1.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1997.A-1-4
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