1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
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International Conference on Solid State Devices and Materials
1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan

[A-2-4]Electron Beam Induced Damage of MOS Gate Oxide

Morikazu Konishi、Michitaka Kubota、Kaoru Koike(1.Basic Process Technology Department, Advanced Devices Department, ULSI R&D Labs., Semiconductor Co., Sory Corp.)
https://doi.org/10.7567/SSDM.1997.A-2-4
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