1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
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International Conference on Solid State Devices and Materials
1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan

[A-2-5]Scaling of Flash Memory Interpoly Dielectrics Using NH3-Annealed CVD SiO2 Single-Layer Films

T. Kobayashi、A. Katayama、H. Kume、K. Kimura(1.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1997.A-2-5
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