1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
International Conference on Solid State Devices and Materials
1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan

[A-3-4]Spectroscopic and Theoretical Studies of Interface States at Ultrathin Oxide/Si Interfaces

Hikaru Kobayashi、Yoshiyuki Yamashita、Akira Asano、Yoshihiro Nakato、Yasushiro Nishioka(1.PRESTO, Japan Science and Technology Corporation、2.Department of Chemistry, Faculty of Engineering Science, and Research Center for Photoenergetics of Organic Materials, Osaka University、3.Texas Instruments Tsukuba Research & Development Center Ltd.)
https://doi.org/10.7567/SSDM.1997.A-3-4