1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
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International Conference on Solid State Devices and Materials
1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan

[A-4-1]Drain Disturb Relaxation by Substrate bias Selecting Scheme for Sector Erase Flash Memory with Conventional Single Stacked Gate Cell Structure

M. Yoshimi、N. Shinmura、T. Tanigami、K. Hakozaki、S. Sato、K. Iguchi(1.VLSI Development Laboratories, IC Tenri Group, SHARP Corporation)
https://doi.org/10.7567/SSDM.1997.A-4-1
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