1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
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International Conference on Solid State Devices and Materials
1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan

[A-4-2]Byte Erasable NOR Flash EEPROM with Double Diffused Drain for High Programming Speed

M. K. Cho、K. H. Yum、K. S. Kim、J. H. Choi、S. T. Ahn、Dae M. Kim(1.Memory Division, Semiconductor Business, Samsung Electronics Co., LTD.、2.Department of Electrical Eng., Pohang University of Science and Technology)
https://doi.org/10.7567/SSDM.1997.A-4-2
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