1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
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International Conference on Solid State Devices and Materials
1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan

[B-1-3]An Optimized Via Contact Scheme of FeRAM for Double-Level Metallization and Beyond

Yoo-Sang Hwang、Jin-Woo Lee、Sung-Yung Lee、Bon-Jae Koo、Dong-Jin Jung、Yoon-Soo Chun、Mi-Hyang Lee、Dong-Won Shin、Soo-Ho Shin、Sang-Eun Lee、Byung-Hee Kim、Nam-Soo Kang、Ki-Nam Kim(1.Technology Development, Semiconductor R&D Center, Samsung Electronics Co.)
https://doi.org/10.7567/SSDM.1997.B-1-3
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