1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
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International Conference on Solid State Devices and Materials
1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan

[D-1-1]New Doping Method in Semiconductors Proposed by ab initio Electronic Structure Calculation

H. Katayama-Yoshida、T. Yamamoto(1.Department of Condensed Matter Physics The Institute of Scientific and Industrial Research Osaka University)
https://doi.org/10.7567/SSDM.1997.D-1-1
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